在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用  

Photoelastic Effect and Lateral Optical Confinement in InGaAsP/InP Double Heterostructures

作　　者：邢启江[1] 徐万劲[1] 武作兵[2] 

机构地区：[1]北京大学物理系,北京100871 [2]中国科学院力学研究所,北京100080

出　　处：《Journal of Semiconductors》2001年第7期846-852,共7页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :699760 0 3 )

摘　　要：从理论上计算了厚度为 110 nm的 W0 .95 Ni0 .0 5 金属薄膜应变条在 In Ga As P/ In P双异质结构中形成的应力场分布 ,及由应力场分布引起的折射率变化 .在 W0 .95 Ni0 .0 5 金属薄膜应变条下半导体中 0 .2— 2μm深度范围内 ,由应变引起条形波导轴中央的介电常数 ε相应增加 2 .3× 10 - 1— 2 .2× 10 - 2 (2 μm应变条宽 )和 1.2× 10 - 1— 4.1× 10 - 2(4μm应变条宽 ) .同时 ,测量了由 W0 .95 Ni0 .0 5 金属薄膜应变条所形成的 In Ga As P/ In P双异质结光弹效应波导结构导波的近场光模分布 .从理论计算和实验结果两方面证实了 In Ga As P/ InPhotoelastic optoelectronic device is a novel planar device that is suitable for the optoelectronic integration.The stress field profile is calculated,as well as the refractive index variations caused by the strain in InGaAsP/InP double heterostructures beneath the 110nm thick W 0.95 Ni 0.05 metal thin film strain stripes.The strain induced increments in the dielectric constant at the center waveguide axes are from 2 3×10 -1 to 2 2×10 -2 and from 1 2×10 -1 to 4 1×10 -2 for the 2μm wide stripe and the 4μm wide one respectively when the depth ranges from 0 2 to 2μm in a semiconductor.Experimental measurements of the near field patterns have been carried out on the InGaAsP/InP double heterostructure photoelastic waveguides induced by W 0.95 Ni 0.05 metal thin film strain stripes.Both the theoretical calculation and experimental results have well confirmed the lateral optical confinement of photoelastic waveguides in the InGaAsP/InP double heterostructures.

关 键 词：侧向光 光弹效应 InGaAsP/InP双异质结构 半导体材料 

分 类 号：TN256[电子电信—物理电子学]