氧气中退火Ge-SiO_2共溅射薄膜的强紫光发射  

Strong Violet Emission from Ge-SiO_2 Co-Sputtered Films Annealed in O_2

作　　者：沈今楷[1] 吴兴龙[1] 袁仁宽 谭超 鲍希茂[1] 

机构地区：[1]南京大学固体微结构国家重点实验室,南京大学物理系南京210093

出　　处：《Journal of Semiconductors》2001年第9期1131-1134,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :5 9832 10 0和 5 9772 0 38)~~

摘　　要：Ge- Si O2 共溅射薄膜分别在 O2 、N2 和空气中退火后 ,在 Xe灯 2 5 0 nm线激发下 ,均观测到位于 40 0和 30 0 nm的紫、紫外光发射 (PL) .傅里叶变换红外吸收谱 (FT- IR)表明 ,这两个 PL 峰与锗氧化物紧密相关 .进一步的光致发光激发谱 (PL E)则证实它们来源于 Ge O色心的光学跃迁 .对比不同退火气氛下的 PL 强度 ,发现最强的光发射出现在 80 0℃氧气里退火的样品中 .这表明 ,退火气氛中氧的存在 ,能够增强 Ge- Si O2 共溅射薄膜的紫、紫外光发射 ,是一种增强光发射强度的新途径 .Photoluminescence (PL) spectra of Ge-SiO 2 co-sputtered films annealed in O 2?N 2 and air are examined by using a 250nm excitation line of Xe lamp.Violet and ultraviolet PL peaks are observed at ～400 and ～300nm,which are of the similar behavior at one annealing temperature.The maximal intensities appear when the sample annealing at 800℃ in O 2.The Fourier transform infrared absorption (FTIR) results suggest that the two PL peaks are closely related to Ge oxide in the samples.The PL excitation (PLE) spectral examinations prove that they originate from the optical transitions in GeO color centers.The existence of oxygen during the annealing can improve the GeO density in the samples and make the PL intensities enhanced largely.A new way for improving the violet and ultraviolet PL intensities is provided,which is useful in the device applications.

关 键 词：光致发光 磁控溅射 傅里叶变换 红外吸收谱 氧气 锗 二氧化硅 薄膜 

分 类 号：TN36[电子电信—物理电子学]