WC-Co硬质合金上高质量金刚石薄膜的制备  

Preparation of high quality diamond films on WC-Co substrates

作　　者：马志斌[1] 汪建华[1] 邬钦崇[2] 王传新[1] 

机构地区：[1]武汉化工学院材料科学与工程系,湖北武汉430073 [2]中国科学院等离子体物理研究所,安徽合肥230031

出　　处：《武汉化工学院学报》2001年第2期44-46,49,共4页Journal of Wuhan Institute of Chemical Technology

基　　金：湖北省教委资助项目! (项目编号 :99z0 2 2 )

摘　　要：采用微波等离子体化学气相沉积法在硬质合金基体上制备金刚石薄膜 .研究了铜过渡层和酸蚀脱钴两种基体前处理工艺以及在施加铜过渡层的情况下 ,不同的沉积气压和基片温度对金刚石薄膜的质量的影响 .结果表明 :在施加铜过渡层后 ,在适中的沉积条件下 (沉积气压 6.0 k Pa,基片温度约为 780℃ )Diamond films were prepared on WC-Co substrates with microwave plasma chemical vapor deposition. The effects of different pretreatments including acid etching and copper interlayer and deposition conditions on the quality of diamond films were studied. The result of this study shows that the quality of diamond film is good with moderate conditions of gas pressure 6.0 kPa and substrate temperature 780 ℃.

关 键 词：金刚石薄膜 硬质合金 薄膜质量 制备 微波等离子体化学气相沉积法 

分 类 号：O484.1[理学—固体物理]