金属与硼硅玻璃场致扩散连接形成机理  

Joining Mechanism of Field-assisted Diffusion Bonding of Borosilicate Glass to Metals

作　　者：孟庆森[1] 俞萍[1] 张丽娜[1] 薛锦[1] 

机构地区：[1]西安交通大学焊接研究所

出　　处：《焊接学报》2001年第4期63-65,共3页Transactions of The China Welding Institution

基　　金：西安交通大学国家重点学科建设基金资助项目

摘　　要：以固体电解质硼硅玻璃与单晶硅和铝的连接为例 ,研究了玻璃—金属FDB连接过渡区的微观组织特征 ,分析了连接形成机理及主要工艺参数对连接过程的影响。提出了金属—氧化物过渡层—玻璃的接头结构形式及静电场条件下离子扩散及接合模型。测试采用SEM及超轻元素EDX、XRD ;试验采用专用键接焊机 ;工艺参数电压 4 0 0～ 80 0V ,外压力 0 .0 5～ 1MPa ,温度 2 5 0～ 4 0 0℃。研究认为 ,金属 /玻璃的界面接合成因于玻璃中负氧离子的扩散及界面复合氧化物的沉积形成。电压、温度、外压力及试件表面状态均是离子迁移和接合的主要影响因素。过渡区柱状组织结构对接合强度具有重要意义。The features of microstructure in the boding interface arca of field assisted diffusion bonding(FDB)of glass to metal have been studied,bonding mechanism and its influence factors have been analyzed by meams of SEM,EDX and XRD,for which the bonding of electrolyte glass to moncrystal silicon and aluminum has been used as examples.The models of 'metal oxides glass' of joining structure and ions diffusion bonding are indicated.A special bonding machine is used,voltage is 400～800 V,pressure is 0.05～1.0 MPa,temperature is 250～400 ℃.The present study concludes that the joining forming is contributed by process of oxygen ions flowing and bonding with metal ions and deposited in the interface;the voltage,temperature,pressure and surface roughness of test wafers are influence factors for ions flowing and bonding;the pillar shape microsturcture in the transitional area is favorable to bonding strength.

关 键 词：玻璃 金属 场致扩散连接 过渡区 

分 类 号：TG453.9[金属学及工艺—焊接]