非晶态Se薄膜的自发晶化研究  被引量:4

Spontaneous Crystallization of Amorphous Se Thin Film

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作  者:鲍海飞[1] 叶水驰[1] 王利平[1] 王骐[1] 

机构地区:[1]哈尔滨工业大学电子科学与技术系,哈尔滨150001

出  处:《光学学报》2001年第4期499-503,共5页Acta Optica Sinica

基  金:哈尔滨市青年基金!(1997年 )资助项目

摘  要:利用真空热蒸镀的方法制备了非晶Se薄膜 ,测试了稳定的非晶Se薄膜、不稳定的非晶Se薄膜和初始自发晶化的非晶Se薄膜的透射率光谱和拉曼光谱。对透射率光谱曲线进行了拟合 ,计算了薄膜的厚度和折射率随波长的变化关系。在自发晶化过程中 ,Se薄膜折射率逐渐增大 ;随波长增大 ,折射率则减小。初始自发晶化的Se薄膜其透射率低于非晶Se薄膜 ,光学吸收边向长波长方向移动。拉曼光谱测试表明 ,非晶Se薄膜在自发晶化过程中 ,出现标志Se8环和链的结构 ,不完整的环和链结构在自发晶化过程中得到了增强。Thin a-Se films were prepared by thermal evaporation method. Optical transmission spectra and Raman scattering spectra were measured for stable a-Se film, unstable a-Se film and its initially spontaneous crystallization film. The transmission spectra were simulated and, refractive indexes varying with wavelength and thickness of films were calculated. The refractive index was increased during the spontaneous crystallization and, decreased with the increasing wavelength. The transmission intensity of the spontaneous crystallization of Se thin film was lower than that of the amorphous Se thin film and the absorption edge was shifted to longer wavelength. The distorted chain and incomplete Se8 ring structures were also enhanced during the spontaneous crystallization process measured by the Raman scattering measurement.

关 键 词:非晶Se薄膜 自发晶化 拉曼光谱 非晶硒薄膜 透射率光谱 真空热蒸镀 

分 类 号:O484.41[理学—固体物理] O751[理学—物理]

 

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