低温等离子体氧化α-Si∶H薄膜的蓝光发射  

Blue Luminescence from α-Si∶H Thin Film Oxidized by Low-Temperature Plasma

作　　者：石旺舟[1] 梁厚蕴[1] 欧阳艳东[1] 

机构地区：[1]汕头大学物理系,汕头515063

出　　处：《光学学报》2001年第6期676-678,共3页Acta Optica Sinica

基　　金：苏州大学薄膜实验室开放基金;广东省科技攻关基金!(ZKB0 0 80 5G)资助课题

摘　　要：通过荧光光谱研究了放电等离子体氧化的α Si∶H薄膜的荧光特性 ,在 45 0nm～ 5 0 0nm范围内常温下观察到强蓝光发射 ,发光强度随沉积氧化的周期数增加而增强。发射带呈七峰结构 ,位置分别为 46 0nm、46 5nm、472nm、478nm、485nm、490nm、496nm。实验结果直接证明了蓝光发射与缺陷能级有关 ,其起源于Si O结合特定组态而形成的发光中心。Luminescence characteristies of α-Si∶H thin film oxidized by low-temperature plasma was investigated. Strong blue photoluminescence peaks centered at 460 nm,465 nm,472 nm,\{478 nm,\}485 nm,490 nm and 496 nm ranging from 450 nm～500 nm were observed at room temperature. The result shows that strength of the photoluminescence peak increases with the cycle number of deposition-oxidation during preparation. Blue luminescence peaks originate luminescence centers related to O-Si defect.

关 键 词：薄膜 等离子体氧化 蓝光发射 

分 类 号：O484.41[理学—固体物理]