LT-GaAs飞秒光电导特性  

FEMTOSECOND PHOTO-CONDUCTIVE CHARACTERISTICS OF LT-GaAs

作　　者：郭冰[1] 文锦辉[1] 张海潮[1] 廖睿[1] 赖天树[1] 林位株[1] 

机构地区：[1]中山大学超快速激光光谱学国家重点实验室,物理系广州510275

出　　处：《红外与毫米波学报》2001年第3期179-183,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金 (编号 198740 82 );广东省自然科学基金 (编号980 36 8)资助项目&&

摘　　要：采用飞秒脉冲光电探测技术研究低温生长砷化镓光电导开关超快瞬态响应特性 .实验测得不同激发波长或偏置电压下 L T- Ga As光电导开关瞬态响应驰豫时间约 35 0～ 390 fs,由实验数据计算得到电子迁移率约 10 0 0 cm2 /V.s.由导出的瞬态光电流相关响应归一化表达式 ,对实验曲线进行数据拟合 ,结果与实验曲线吻合 .The ultrafast photo-conductive characteristics of LT-GaAs were studied with femtosecond photocurrent correlation measurements. A response time ranging from 350 to 390 fs of a LT-GaAs micro-coplanar-strip-lines gap for different exciting photon energies and different bias voltages was obtained. It has been estimated that the transport rate of the photo-excited electrons in the gap is 1000cm(2)/V.s. The experimental traces are well consistent with a theoretical normalized transient photo-current correlation function.

关 键 词：飞秒激光 LT-GAAS 超快光电导开关 

分 类 号：TN29[电子电信—物理电子学]