溅射法制备InSb薄膜工艺探索——In与Sb的原子比问题  

The Technological Probe of InSb Film by RF Sputtering -The Problem About Atomic Ratio of In to Sb

作　　者：温作晓[1] 孙承松[2] 魏永广[2] 关艳霞[2] 周立军[2] 

机构地区：[1]东南大学微电子中心,南京市210096 [2]沈阳工业大学信息学院,沈阳市110023

出　　处：《仪表技术与传感器》2001年第7期35-36,共2页Instrument Technique and Sensor

摘　　要：介绍一种基于原子比为 1:1的InSb靶制备原子比为 1:1的InSb薄膜的方法 ,实验结果表明 。This paper introduces a method of fabricating InSb thin film by RF sputtering in which the ratio of In to Sb is 1:1. A 1:1(the ratio of In to Sb) InSb target was used. The test results are analyzed. The experimental results indicate that in the sputtering fabrication process of the analogous compounds this method is good to the departure between the film's ingredients and target.

关 键 词：溅射 INSB薄膜 原子比 磁敏元件 磁敏传感器 

分 类 号：TP212.13[自动化与计算机技术—检测技术与自动化装置]