GaAs异质结材料BOA光开关特性分析  

CHARACTERISTICS OF GaAs HETEROSTRUCTURE BOA TYPE OPTICAL SWITCHES

作　　者：黄旭涛[1] 江晓清[1] 尹锐[1] 杨建义[1] 王明华[1] 

机构地区：[1]浙江大学信息与电子工程系,杭州310027

出　　处：《光子学报》2001年第2期157-161,共5页Acta Photonica Sinica

基　　金：国家自然科学基金! (No.698770 1 7;国家重点基础研究发展规划资助项目! (No.G1 9990 3 3 1 0 4 )

摘　　要：本文较为详细地讨论了 Ga As异质结材料 BOA型光开关的特性 ;并应用转移矩阵理论和有效折射率法计算和分析了电极结构与器件半波电压和串音度的关系 .结果表明 :通过优化设计电极的宽度可以获得 BOA型光开关最小的半波电压 ;电极位置的对称性对器件串音度起决定性的影响 .采用自对准工艺技术可以比较准确的控制电极的位置 .分析表明 :要得到 <- 40 d B的串音度 ,电极位置偏差必须小于 0 .In this paper,characteristic analysis of GaAs heterostructure BOA type optical switches has been discussed in detail.The relations between extinction ration,half wave voltage and electrode structure has been analyzed and calculated with transfer matrix theory and effective index method.The following conclusions has been made:1)The electrode width can be optimized to get the lowest half wave voltage of BOA type optical switches.2)The symmetry of electrode is crucial for the extinction ration.3)A process named Self adjustable Technics had been proposed to get low extinction ration.Analysis shows:to gain low extinction ration less than -40dB,the offset of electrode position should be less than 0.3 micron.

关 键 词：BOA 转移矩阵理论 自对准工艺 光开关 GaAs异质结 特性分析 有效折射效率法 电极结构 串音度 

分 类 号：TN256[电子电信—物理电子学] TN204