SiCw/6061Al复合材料的界面研究  

Interface in SiCw/6061AL Composite

作　　者：吴昆[1] 耿林[1] 刘庆[1] 姚忠凯[1] 

机构地区：[1]哈尔滨工业大学

出　　处：《金属科学与工艺》1991年第2期59-62,共4页

摘　　要：本研究用CM12型透射电镜配备的PV9100X射线能谱,对SiCw/6061Al复合材料中碳化硅晶须和相邻铝基体之间界而区域的铝、硅二元素的相对含量进行了测试;并利用JCXA733电子探针设备,测试了由复合材料溶下的碳化硅晶须中铝、硅二元素的相对含量。测试结果表明:铝元素没有向碳化硅晶须中扩散。虽然在碳化硅晶须表层大约50nm范围内存在铝元素的浓度梯度变化,但是否由扩散所致,尚需进一步探讨。The elemental distribution of the SiC-Al interface in a SiCw/6061Al composite was measured by means of CM12S TEM equipted with PV9100 EDS, and the content of Al and Si in the SiCW/6061Al composite was also measured by JCXA733 EPMA, The experimental results show that there is no diffusion of Al into the SiC whisker, Although a certain amount of Al is distibutd on the surface of the SiC whisker in the range of 50nm, it is not sure whether it is resulted from the elemental distribution.

关 键 词：碳化硅 晶须 复合材料 

分 类 号：TB332[一般工业技术—材料科学与工程]