In_(0.5)Ga_(0.5)P/GaAs二维空穴气p沟异质结场效应管  

In_(0.5)Ga_(0.5)P/GaAs p Channel Heteros tructure FET Based on Two Dimensional Hole Gas

作　　者：徐红钢[1] 陈效建[1] 高建峰[1] 郝西萍[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》2001年第3期276-280,共5页Research & Progress of SSE

基　　金：国家自然科学基金项目 :批准号 :694 70 3 8

摘　　要：提出了一种新颖的 Ga As基 p沟异质结场效应管 (p HFET)概念 ,器件采用了 In0 .5Ga0 .5P/ Ga As异质系统及二维空穴气 (2 DHG)原理以改善 Ga As的空穴输运特性。据此原理研制的器件可在室温下工作 ,其实验结果为 :室温下 ,饱和电流 Idss=6 1m A/ mm,跨导 gm=4 1m S/ mm;77K下 ,饱和电流 Idss=94 m A/ mm,跨导 gm=6 1m S/ mm。预计该器件在微波和数字电路中极佳的电流密度及高频增益 ,因而具有良好的应用潜力。A novel p-type heterostructure field-effect transistor (p-HFET) based on two dimensional hole gas (2DHG) has been designed and fabricated. It's the first time to adopt InGaP/GaAs heterojunction for p type device. The device has worked successfully at room temperature with Idss of 61 mA/mm and gm of 41 mS/mm; and at 77 K, with Idss of 94 mA/mm and gm of 61 mS/mm. Hence we can consider that InGaP/GaAs heterojunction system is very advantageous to pHFET, and can show potential importance for both microwave and digital application.

关 键 词：铟镓磷/砷化镓 二维空穴气 p沟异质结场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]