重掺碳GaAs层的MOCVD生长及特性研究  

Growth and Characteristic of Heavy C-doped GaAs Layer by LP-MOCVD Using CCl_4

作　　者：王向武[1] 程祺祥[1] 张岚[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》2001年第3期334-338,共5页Research & Progress of SSE

摘　　要：采用 CCl4 作为碳掺杂源 ,进行了重掺碳 Ga As层的 L P- MOCVD生长 ,并且对掺杂特性进行了研究 ,研究了各生长参数对掺杂的影响。CCl4 流量是决定掺杂浓度的主要因素。减小生长温度、减小 / 比、降低生长压力 ,都能较大的提高掺杂浓度。通过改变 CCl4 流量 ,在生长温度为5 5 0～ 6 5 0℃、 / 比为 15～ 4 0 ,生长压力在 1× 10 4 ～ 4× 10 4 Pa的范围内 ,均能得到高于 2× 10 19/cm3 的掺碳 Ga As外延层 ,最高掺杂浓度为 8× 10 19/The GaAs epitaxia l layers with heavy C-doped were grown b y LP-MOCVD using CCl 4.We investigated the doping characteristi cs, from which the influence of various growth parameters on doping was research ed. The flow rate of CCl 4 was the main fact or effecting doping concentration. The reduced growth temperature, Ⅴ/Ⅲ rati o and reactor pressure increased the hol e concentration. The heavy C -doped GaAs Layers with the hole concent ration higher than 2×10 19/cm 3 were obtained within a wide growth condition range, am ong which the maximum hole concentration was 8×10 19/cm 3.

关 键 词：金属有机化合物气相沉积 砷化镓 碳掺杂 

分 类 号：TN304.054[电子电信—物理电子学]