NMOSFET电离辐射效应的二维数值模拟  

Two Dimensional Numerical Simulation of Ionizing-radiation Effects on NMOSFET

作　　者：罗尹虹[1] 张正选[1] 吴国荣[1] 姜景和[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《固体电子学研究与进展》2001年第3期339-344,共6页Research & Progress of SSE

摘　　要：对具有侧向寄生晶体管的 NMOSFET的电离辐射效应进行二维数值模拟。通过在 Si O2内解泊松方程、电流连续性方程及总剂量引入的空穴陷阱的辅助方程 ,对 NMOSFET的电离辐射效应特性进行研究 ,得出辐射产生的泄漏电流 。An analysis of ionizing-radiation effects on NMOSFET with lateral parasitic transistor was studied by a two di mensional numerical simulation. Poisson equation, the usual continuity equatio ns and additional equations describing the dose induced charge trapping in SiO 2 were sloved. The ionizing-radiation effect on NMOSFET was studied. It was il lustrated that the dose induced leakage current was due to the threshold voltage shift of the lateral parasitic transistor mainly in the bird's beak reg ion and field oxide region.

关 键 词：N-金属氧化物半导体效应晶体管 电离辐射效应 二维数值模拟 

分 类 号：TN386.1[电子电信—物理电子学]