金属诱导非晶硅横向晶化形成的多晶硅的生长研究  

The Growth of Polysilicon Formed by Metal-induced Lateral Crystallization of Amorphous Silicon

作　　者：秦明[1] Yuen C Y Poon Vincent M C 黄庆安[1] 

机构地区：[1]东南大学微电子中心,南京210096 [2]香港科技大学电子与电机工程系

出　　处：《固体电子学研究与进展》2001年第3期345-349,共5页Research & Progress of SSE

摘　　要：详细研究了金属诱导非晶硅横向晶化时间、温度对晶化生长的影响。结果显示 ,晶化生长速度受温度影响较大 ,其最大生长速度在 6 2 5℃附近。在较高的温度下 ,非晶自发成核和晶化 ,从而限制了金属诱导晶体生长速度。镍诱导源的长度和厚度也对晶体生长有影响 。In this paper, the effect of anneali ng temperature and time on the rate of metal-induced lateral crystallization (M ILC) of amorphous silicon are investigated in detail. The results show that the MILC growth rate depends on the annealing temperature strongly. A maximum MILC r ate is found at near 625℃. The nucleation and crystallization of a-Si will occ ur spontaneously at higher temperature, which will restrict the MILC. The length and thickness of Ni source also affect the MILC growth, the growth mechanism is discussed in the paper.

关 键 词：金属诱导横向晶化 晶化速度 镍诱导源 晶化波 多晶硅生长 

分 类 号：O78[理学—晶体学]