N型氮化镓的结构和光电导特性  

The Structure and Photoconductivity of N-Type GaN

作　　者：艾子萍[1] 刘云燕[2] 张德恒[3] 

机构地区：[1]山东大学实验中心,山东济南250100 [2]淄博学院基础部,山东淄博255000 [3]山东大学物理系,山东济南250100

出　　处：《岩矿测试》2001年第3期195-198,共4页Rock and Mineral Analysis

基　　金：山东自然科学基金项目 (Y96A12 0 16 )

摘　　要：采用透射电镜高分辨反射电子衍射、扫描电镜形貌观察、X射线衍射等不同方法测试了不同Mg含量的N型氮化镓薄膜的结构。几种测试方法的比较表明 ,高分辨反射电子衍射是确定厚衬底的薄膜结构的快速而简便的方法 。The structural properties of Mg doped GaN films with different Mg concentrations deposited by MOCVD have been measured by TEM with high resolution reflective electron diffraction, SEM and X ray diffraction. The obtained results show that the high resolution reflective electron diffraction is the simplest and the most efficient method for determining the crystallization of the samples with thick substrates. The impurities and defects are main factors that affect the photo conductivity and electric conductivity of N tyep GaN.

关 键 词：透射电镜 高分辨反射电子衍射 扫描电镜 X射线衍射 结构 光电导特性 N型氮化镓 半导体材料 

分 类 号：TN304.2[电子电信—物理电子学]