非本征条件下N型HgCdTe光导探测器的厚度选择  

The thickness choice of n-type HgCdTe photoconductor detectors for unintrinsic state

作　　者：庞真[1] 徐笑敏 

机构地区：[1]山东建筑工程学院基础部,山东济南250014 [2]山东大学红外遥感研究室,山东济南250100

出　　处：《山东建筑工程学院学报》2001年第3期90-94,共5页Journal of Shandong Institute of Architecture and Engineering

摘　　要：分析了N型HG面空间电荷层中的表面电势的变化情况 ,计算了Auger复合寿命及光导器件的探测率 ,讨论了表面电荷密度、表面附合速率及器件厚度对探测器性能的影响。结果表明 ,在非本征条件下 ,对N型HgCdTe光导探测器 ,当表面附合速率及表面电荷密度确定后 ,对器件探测率存在一最优厚度。The variety of the surface potential in the space of n-type HG surface is analyzed in the paper.The bulk time constant for Auger recombination and the detectivity of n-type HgCdTe photoconductors are calculated.The effect of the surface charge density,the surface recombination velocity and the thickness of detectors on detectivities is discussed.The result shows that,for unintrinsic state,there is the best thickness choice of the HgCdTe photoconductor detectivity N-type when the surface recombination velocity and the surface charge density are defined.

关 键 词：HGCDTE光导探测器 表面空间电荷 器件厚度 探测率 

分 类 号：TN215[电子电信—物理电子学]