2.9GHz0.35μm CMOS低噪声放大器  

2.9GHz 0.35μm CMOS Low Noise Amplifier

作　　者：陶蕤[1] 王志功[1] 谢婷婷[1] 陈海涛[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,江苏南京210096

出　　处：《电子学报》2001年第11期1530-1532,共3页Acta Electronica Sinica

基　　金：国家杰出青年科学基金 (No.6982 51 0 1 )

摘　　要：随着特征尺寸的不断减小 ,深亚微米CMOS工艺其MOSFET的特征频率已经达到 5 0GHz以上 ,使得利用CMOS工艺实现GHz频段的高频模拟集成电路成为可能 .越来越多的射频工程师开始利用先进的CMOS工艺设计射频集成电路 ,本文给出了一个利用 0 3 5 μmCMOS工艺实现的 2 9GHz单片低噪声放大器 .放大器采用片内集成的螺旋电感实现低噪声和单片集成 .在 3伏电源下 ,工作电流为 8mA ,功率增益大于 10dB ,输入反射小于 - 12dB .With the scaling-down of the transistor gate-length, and the transit frequency of MOSFET of very-deep Submicron meter (VDSM) CMOS technology has reached higher than 50GHz. It is possible to use the CMOS technology to design high frequency analog integrated circuits that operate in GHz. More and more RF engineers begin to design the RF integrate circuit by advanced CMOS technology. This paper presents a 2.9GHz CMOS low noise amplifier, which is implemented in 0.35μm CMOS technology. The on-chip spiral inductors are utilized for the low noise performance and monolithic integration. With the 3V-power supply, the operation current is about 8mA. The gain at 2.9GHz is larger than 10dB, and the input reflection is less than-12dB at 2.9GHz.

关 键 词：CMOS工艺 低噪声放大器 螺旋电感 

分 类 号：TN722.3[电子电信—电路与系统]