DEA(TCNQ)_2与TEA(TCNQ)_2单晶上的STM热化学烧孔性能比较  

Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)_2 and TEA(TCNQ)_2

作　　者：雷晓钧[1] 陈海峰[1] 刘忠范[1] 

机构地区：[1]北京大学化学与分子工程学院纳米科学技术中心,北京100871

出　　处：《物理化学学报》2001年第9期769-772,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金重大项目(6989022);国家自然科学基金(29973001)联合资助项目(59910161982);国家杰出青年科学基金(59425006)资助项

摘　　要：利用STM隧道电流焦耳热诱导分解气化的热化学烧孔方法，对两种存储材料DEA(TCNQ)_2和TEA(TCNQ)_2的存储性能作了比较,DEA(TCNQ)_2可以得到更高的存储密度、更大的信息孔深/孔径比,有更大的写入阈值电压.由此说明通过对存储材料的设计可以对存储系统的性能进行优化.The thermochemical hole burning properties of two different charge transfer complexes, DEA (TCNQ)(2) and TEA (TCNQ)(2), were studied in this work. It shows that the data writing on DEA (TCNQ) 2 needs a larger threshold voltage compared with TEA (TCNQ) 2, and that the DEA (TCNQ) 2 gives a smaller hole size and a higher depth/diameter ratio, demonstrating the possibility of optimizing the storage performance with a suitable molecular design.

关 键 词：STM 信息存储 热化学烧孔 存储材料 存储性能 电荷转移复合材料 DEA(TCNQ)2 TEA(TCNQ)2 单晶 

分 类 号：TQ591[化学工程—精细化工]