化学气相沉积金刚石薄膜生长的原位反射率测量(英文)  

In situ reflectivity measurement of CVD diamond thin film

作　　者：骆金龙[1] 应萱同[1] 

机构地区：[1]复旦大学信息学院光科学与工程系,上海200433

出　　处：《功能材料与器件学报》2001年第3期284-286,共3页Journal of Functional Materials and Devices

基　　金：Supported by Shanghai Research Center of Applied Physics

摘　　要：报道了化学气相沉积金刚石薄膜生长的原位反射率测量，提出了监控金刚石薄膜生长的激 光反射多光束干涉的数学模型。通过原位反射率的测量， 精确监控了金刚石薄膜的生长厚度 , 成功地制备了红外增透膜。这种方法的测量装置简单、紧凑而且可靠。In this paper the in situ reflectivity of CVD (chemical vapor deposition) diamond thin film was measured. By in situ monitoring the reflectivity from the growing CVD diamond thin film surface, the thickness of the diamond film can be accurately measured and controlled. A mathematical model is presented. Using this method, diamond IR antireflective thin film were successfully deposited on a silicon substrate. The measure equipment is quite simple, compact and reliable.

关 键 词：CVD 金刚石薄膜 原位测量 反射率 

分 类 号：TN304.18[电子电信—物理电子学] O484.5[理学—固体物理]