X射线对Kovar封装材料的剂量增强效应的Monte-Carlo计算  

Monte-Carlo calculation of dose enhancement effects produced by X ray to kovar package

作　　者：郭红霞[1] 张义门[2] 陈雨生[1] 周辉[1] 龚建成[1] 吴国荣[1] 林东升[1] 韩福斌[1] 

机构地区：[1]西北核技术研究所 [2]西安电子科技大学微电子研究所,陕西西安710000

出　　处：《核电子学与探测技术》2001年第5期392-396,共5页Nuclear Electronics & Detection Technology

摘　　要：用 Monte- Carlo光子 -电子耦合输运程序计算了真实半导体封装 Kovar结构对不同能量 X射线在硅中的剂量增强因子 ,并与内层不涂金的 Kovar结构进行比较 ,计算了界面处两种结构进入硅的净电子数 ,结果证实了界面处产生的剂量增强主要来自界面处高 Z材料二次电子的贡献 。In this paper, with the help of Monte Carlo simulation of photon electron couple transportation code, RDEF (Relative Dose Enhancement Factors) in silicon produced by X rays with different energy are calculated for the structure of real semiconductor device of kovar package. Resulsts are compared with the kovar structure without inner Au material. Net electrons entering into the silicon at interface are given for the two different structure. It has been proved that second electrons from high Z material at interface are main contributions to dose enhancement. A reliable evalution approach of theory is provided for studying X ray dose enhancement.

关 键 词：剂量增强效应 MONTE-CARLO方法 平衡剂量 损伤增强 半导体 Kovar 封装材料 集成电路 X射线 

分 类 号：TN305.94[电子电信—物理电子学] O434.14[机械工程—光学工程]