镀膜锰铜压阻计结晶问题研究  

CRYSTALLIZATION OF PLATING-MANGANIN PIEZORESISTANCE GAUGES

作　　者：施尚春[1] 董石[1] 黄跃[1] 周鸿仁[2] 

机构地区：[1]中物院流体物理研究所冲击波物理与爆轰物理实验室 [2]成都电子科技大学,四川成都610034

出　　处：《高压物理学报》2001年第4期254-258,共5页Chinese Journal of High Pressure Physics

摘　　要：用磁控溅射低温沉积镀膜技术制做锰铜薄膜 ,能够保持薄膜中锰、铜、镍成份的相对稳定和锰铜合金正六面三元固溶体金相结构的特性。但是 ,锰铜镀膜的结晶晶粒度与工业生产的锰铜合金还有较大差别 ,宏观物理量表现为 :电阻率偏高 ,冲击压阻系数偏小。真空加热到 6 73K对锰铜镀膜进行热处理 1h ,可以使晶粒尺寸平均增加约 2 0 % ,电阻率减小一半 ,0～ 80GPa冲击波加载动态标定实验显示 :压阻系数增加到 2 .0～ 2 .6 (10 - 2 /GPa) ,接近轧制薄箔锰铜计的水平。Magnetically controlled cathod plasma sputtering technique was used to manufacture the plating-manganin film. Although the film was the same metal-construction feature as manganin-alloy does, it has smaller crystalloid-size, twice resistivity and less piezoresistance coefficient than the alloy. However, the average crystal size increases by about 20%, and the resistivity decreases by 50%. The piezoresistance coefficient of the film annealed under 673 K in vacuum increased to 2.0-2.6 (10-2/GPa) in 0-80 GPa.

关 键 词：镀膜锰铜压阻 晶粒度 电阻率 压阻系数 结晶 压力传感器 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]