碲镉汞晶体组分及其均匀性控制研究  

Study on the Composition and Homogeneity Control of HgCdTe Crystal

作　　者：刘克岳[1] 王金义[1] 吴人齐[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《人工晶体学报》2001年第4期383-388,共6页Journal of Synthetic Crystals

摘　　要：本文利用碲镉汞膺二元固液T -X相图对碲镉汞晶体生长方法进行了分类研究 ;分析了影响碲镉汞晶体组分及其均匀性的因素 ,提出了存在的问题和改善的措施 ;认为在特定组分的固相线温度 (相图中的B点 )生长碲镉汞晶体是一种比较有效的方法 ,并报道了采用双相复合维持液相成份生长大直径4 0mm碲镉汞晶体组分控制研究的结果 (在S≈ 12cm2 的晶片面积上 ,x =0 .2 18±0 .0 0 3)。The HgCdTe crystal growth methods were classified by using HgCdTe pseudo binary T X phase diagram.The factors which affect the composition and it′s homogeneity were analyzed.The existing problems and the measures for improving composition control are presented.Based on above analysis,crystal growth at solid line temperature of a specific composition is suggested to be effective method for growing high quality HgCdTe crystals.The results showed that the homogeneity of large size (40mm) HgCdTe crystal grown by this method is x =0.218±0.003 in the area of S ≈12cm 2.

关 键 词：磅镉汞 组分 均匀性 晶体生长方法 晶体结构 半导体材料 

分 类 号：O614.243[理学—无机化学] TN304.2[理学—化学]