声表面波器件用Y36°切LiTaO_3晶片表面加工研究  

Research on Fabricating Y36°-cut LiTaO_3 Wafer for SAW

作　　者：夏宗仁[1] 李春忠[1] 崔坤[1] 

机构地区：[1]浙江省德清华莹电子有限公司技术中心,德清313216

出　　处：《人工晶体学报》2001年第4期419-421,共3页Journal of Synthetic Crystals

摘　　要：采用双晶摆动曲线法测量了钽酸锂晶片的加工损伤层 ,其平均值在 2 6 .2～ 5 2 .8μm之间 ;根据工序要求 ,选取加工余量为 15 0 μm左右 ,采用天然石榴石研磨粉 ,适当的磨料浓度、添加悬浮剂、分散剂以避免产生缺陷 ,并采用化学机械抛光法 ,可获得较高加工质量的声表面波器件用Y36°切LiTaO3Thickness of damage layer of LiTaO 3 wafer was determined by using double crystal rock curve method.The average value of the layers distributed between 26.2-52.8μm.Based on the procedure,appropriate removing quantity for lapping was chosen to be about 150μm.Reasonable concentration of natural garnat powder in lapping liquid with adding of suspending and dispersion agent are the key factors to avoid processing defects.Using chemical mechanical polishing,high quality surface of Y36° cut LiTaO 3 wafer for SAW can be obtained.

关 键 词：LITAO3晶体 损伤层 Beiliby层 声表面波器件 锂酸锂晶片 表面加工 终端机 

分 类 号：O786[理学—晶体学] TN87[电子电信—信息与通信工程]