碳氮膜的沉积工艺及其结构研究  

Research on deposition and structure of CN_x films

作　　者：付志强[1] 顾子平 袁镇海[1] 邓其森[1] 林松盛[1] 郑健红[1] 戴达煌[1] 

机构地区：[1]广州有色金属研究院材料表面工程技术研究开发中心,广东广州510651 [2]广州凯得控股有限公司,广东广州510730

出　　处：《广东有色金属学报》2001年第2期134-137,共4页Journal of Guangdong Non-Ferrous Metals

基　　金：广东省自然科学基金项目 (95 0 734)

摘　　要：以氨气为反应气体 ,用真空阴极电弧沉积法制备了 CNx 膜 ,研究了工艺参数对膜层的沉积速率、化学成分的影响及膜层结合状态 .结果表明 :沉积速率随着氨气分压的提高而下降 ,当氨气分压达到 6 .7Pa时将没有膜的沉积 ;CNx 膜主要由碳和氮组成 ,降低真空系统的抽速、将反应气体导至靶面附近、提高氨气分压可以提高膜层中氮含量 ;氮是以化合态存在于膜层中 .CN x films were fabricated with ammonia as reactive gas by means of vacuum cathodic arc deposition method; the effect of deposition parameters on deposition rates and chemical composition in CN x coatings was studied and chemical bond status of CN x coatings was also analyzed.It was showed that the deposition rate of CN x films decreased with the increase of ammonia partial pressure; the coatings were mainly composed of C and N,and N content in CN x could be increased by decreasing pumping rate of vacuum system, guiding ammonia to the surroundings of the target and increasing ammonia partial pressure; nitrogen existed in the coatings in chemical bond status.

关 键 词：电弧沉积 VCAD 氨气 增氮膜 

分 类 号：TG174.444[金属学及工艺—金属表面处理]