GaP薄膜的制备与性能研究  

Preparation and Properties of Gallium Phosphide Films

作　　者：宋建全[1] 刘正堂[1] 郭大刚[1] 耿东生[1] 郑修麟[1] 

机构地区：[1]西北工业大学,西安710072

出　　处：《材料工程》2001年第10期27-30,共4页Journal of Materials Engineering

基　　金：航空基础科学基金 ( 98G5 310 4)资助

摘　　要：利用磁控溅射法成功地制备出 Ga P薄膜 ,并对 Ga P薄膜的沉积速率、成分、结构及红外光学性能进行了研究。结果表明 ,沉积薄膜中 Ga与 P的原子比接近 1∶ 1,形成了 Ga P化合物 ,呈非晶态结构。设计并制备出 Ga P/ DL C复合膜系 ,结果表明该膜系在 8～ 11.5 μm波段对 Zn S衬底具有明显的增透效果。制备的 Ga P薄膜的硬度明显高于 Zn S衬底的硬度 ,且与 Zn S衬底结合牢固 。GaP films have been prepared by RF magnetron sputtering of single crystalline gallium phosphide The deposition rate, composition, structure, hardness and optical properties of GaP films have been also investigated The results show that the atom ratio of gallium to phosphor is near 1∶1 and the deposited films are amorphous compound GaP; Anti reflective and protective films consisted by DLC and GaP films are designed and deposited on ZnS substrate The results indicate that the average transmittance in the 8~11 5μm waveband is improved from 69 1% to 86 5% The hardness of GaP films (6860MPa) is much higher than that of ZnS substrate (2744MPa), and it also adhere ZnS substrate firmly, so GaP films could offer excellent protection for ZnS windows and domes

关 键 词：GaP薄膜 射频磁控溅射 增透保护膜系 制备 磷化镓薄膜 性能 硫化锌基片 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]