硅基铁电薄膜的电性能研究  

Electrical Properties of Silicon-based Ferroelectric Thin Films Prepared by Sol-Gel Method

作　　者：任天令[1] 张林涛[1] 刘理天[1] 李志坚[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《固体电子学研究与进展》2001年第4期472-476,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目 (6 980 6 0 0 7);国家 973项目 (G19990 3310 5 )

摘　　要：以 Sol- Gel方法制备了有 Pb Ti O3 (PT)过渡层的硅基 Pb(Zr0 .53 Ti0 .47) O3 (PZT)铁电薄膜 ,底电极分别为低阻硅和硅衬底上溅射的金属钛铂。测试了铁电薄膜的电性能 。Ferroelectric PZT thin films were fabricated on different substrates using Sol Gel method. In order to decrease the annealing temperature, PT buffer layer was added between PZT layer and substrate. It acted as a seed layer to improve the crystallization of PZT thin film. Electrical properties of the ferroelectric thin films were studied by C V curve, dielectric constant and loss, and leakage current measurements.

关 键 词：硅基铁电薄膜 钛锆酸铅 钛酸铅 溶胶-凝胶法 

分 类 号：TN304.9[电子电信—物理电子学]