层状结构铁电薄膜中频率对界面电位降的影响  

The Effect of the Frequency on the Voltage Drop of Interface of Multilayer Ferroelectric Film

作　　者：李兴教[1] 王宁章[1] 鲍军波[1] 冯汉华[1] 陈涛[1] 周健[2] 袁润章[2] 

机构地区：[1]华中科技大学电子系,武汉430074 [2]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《压电与声光》2001年第6期445-448,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目 (5 9972 0 10 );武汉理工大学材料复合新技术国家重点实验室资助项目

摘　　要：利用准分子激光原位淀积方法制备了层状结构铁电薄膜 ,借助 HP4 192 A低频率阻抗分析仪对样品的C- V特性进行了测试 ,对同一频率下不同结构的铁电薄膜的界面电压降及不同频率下同一结构的铁电薄膜的界面电压降进行计算。结果表明 ,在同一频率下不同结构的铁电薄膜其界面电压降不同 ,同一结构的多层铁电薄膜在不同频率下其界面电压降也不同。The multilayer ferroelectric films were prepared using scanning excimer laser.The HP4192A low frequency impedance apparatus was used to measure the C V characteris curves of the samples.The voltage trop of interface of the multilayer ferroelectric films was calculated.The results show taht,there have difference voltage trop of interface for difference structure of multilayer ferroelectric films when they were measured in the same frequency,and there have also different voltage trop of interface for the same structure of multilayer ferroelectric films when they were measured in different frequency.For high frequencies,the capacitance decreases further and the voltage drop at the interface increase further due to the increasing depletion.

关 键 词：层状结构 铁电薄膜 界面电压降 频率 

分 类 号：TN304.9[电子电信—物理电子学]