硅中注入高浓度碳形成微晶碳化硅的研究  

Study on Micro-crystallization of SiC with C Implanted onto Crystal Silicon

作　　者：孙钟林[1] 薛俊明[1] 耿卫东[1] 于振瑞[1] 陆靖谷[1] 

机构地区：[1]南开大学光电子所,天津300071

出　　处：《光电子．激光》2001年第12期1247-1249,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目 (5 9972 0 13 )

摘　　要：为实现 OEIC的全 Si化 ,以适应稀土 Er发光的宽带隙半导体材料。研究了 C- Si基底上注 C形成微晶碳化硅 (μ c- Si C)的途径。经高浓度注 C,在 110 0～ 10 0 0℃ 2 h退火 ,经 X- ray与 Raman测试证明可以获得 μ c- Si C结构。因为在宽带隙 μ c- Si C中能量回传很少 ,故对 Er在波长 1.5 4In order to accomplish of OEIC in a full silicon based the μ c SiC were fabricated with C implanted onto crystal silicon,then annealing in high temperture 1 100～1 000 ℃ for 2 h.The analysis of X ray and Raman for the materials annealed testfy that the microcrystal SiC have been formed in which the photoluminescence at 1.54 μm of Er in room tempertare is favourable because of the transfer back of energy much small in wide bandgap μ c SiC.

关 键 词：离子注入C 退火 微晶碳化硅 硅 

分 类 号：TN304.24[电子电信—物理电子学]