GdCOB晶体的生长及二倍频性质  

Growth and Second-harmonic Generation Property of GdCOB Crystal

作　　者：江怀东[1] 王继扬[1] 胡小波[1] 滕冰[1] 张承乾[1] 王正平[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《光电子．激光》2001年第12期1250-1252,共3页Journal of Optoelectronics·Laser

摘　　要：采用提拉法生长了高光学质量的 Gd Ca4 O(BO3) 3(Gd COB)晶体 ;测量了 Gd COB晶体不同相位匹配方向上的腔内及腔外二倍频转换效率。在 Gd COB晶体的腔内倍频实验中 ,当输入功率为 10 W时 ,空间方向为 (113.2°,4 7.4°)的样品可产生 1.2 2 W波长为 5 32High quality GdCa 4O(BO 3) 3 (GdCOB) crystal is grown by Czochralski method.Samples are cut in and out of principal planes for type Ⅰ phase matching.Their second harmonic generation (SHG) conversion efficiency is measured by a mode locked Nd:YAG laser and the intracavity doubling frequency of GdCOB crystal is reported.At the incident pump power of 10 W,the 532 nm output reaches 1.22 W with the (113.2°,47.4°) cut sample.

关 键 词：GDCOB晶体 二倍频 腔内倍频 晶体生长 

分 类 号：O78[理学—晶体学]