用于离子注入机的Freeman型离子源的研制  

A Freeman type ion source designed for ion implanter

作　　者：姜苏蔚 李钧[1] 杜建敏 桑和康 刘来凤 蒋新元[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《核技术》1989年第1期37-43,共7页Nuclear Techniques

摘　　要：本文介绍了一台适用于离子注入机的Freeman型离子源,该源结构简单、操作方便、功耗低、造价便宜。通过对离子源放电室结构、引出系统的改进,可获得接近旁轴条件、品质优良的离子束,束流在0.5—1mA之间。用常规的双缝法对束流发射度进行测量,能量归一化发射度在2—4×10^(-5)mm·rad·MeV^(1/2)之间,归一化亮度≥7.6×10^(10)A/m^2·rad^2,有一定的应用价值。A Freeman type ion source designed for ion implanter is described. The ion source is simple, low consumption and cheap in price. After improving the structure of discharge chamber and extracting system, high quality para-axial ion beam of 0.5-1mA can be obtained. Conventional two slits method is used for measurements of beam emit-tance. The energy normalized emittance is 2-4×10-5mm·rad·MeV1/2 and normalized brightness≥7.6 ×1010A/m2·rad·This ion source is suitable for practical uses.

关 键 词：离子源 离子注入机 放电室 

分 类 号：TL503.3[核科学技术—核技术及应用]