微电路pn结瞬态电离辐射响应二维数值模拟  

Two-dimensional numerical simulation of microcircuit pn junctions transient radiation response

作　　者：郭红霞[1] 张义门[1] 陈雨生[2] 周辉[2] 陈世斌[2] 龚仁喜[1] 关颖[2] 韩福斌[2] 龚建成[2] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071 [2]西北核技术研究所,陕西西安710024

出　　处：《强激光与粒子束》2002年第1期16-20,共5页High Power Laser and Particle Beams

摘　　要：用增强光电流模型对微电路 pn结瞬态电离辐射响应开展了数值模拟计算。该模型在Wirth-Rogers光电流模型的基础上 ,增加考虑了高注入对过剩载流子寿命的影响以及衬底 (准中性区 )电场的效应 ,这些效应对于高阻材料是不容忽视的。该模型对正确预估微电路Transient radiation response for microcircuit PN junctions with enhanced photocurrent models are calculated using two-dimensional numerical simulation. On the basis of Wirth-Rogers photocurrent models, the enhanced models include two additional effects as high injection effects on excess minority carrier lifetime and electric fields in the substrate (quasi-neutral regions). These effects are most pronounced in high resistivity material. An excellent evaluation approach is provided for accurate prediction of transient response of modern microcircuit pn junctions to ionizing radiation.

关 键 词：微电路 增强光电流模型 Wirth-Rogers光电流模型 过剩少数载流子 高阻材料 数值模拟 Pn结瞬态电离辐射响应 

分 类 号：TN4[电子电信—微电子学与固体电子学]