分子束外延HgCdTe表面缺陷研究  

SURFACE DEFECTS ON MBE GROWN HgCdTe

作　　者：陈路[1] 巫艳[1] 于梅芳[1] 王善力[1] 乔怡敏[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所半导体材料与器件研究中心及国家红外物理重点实验室,上海200083

出　　处：《红外与毫米波学报》2001年第6期406-410,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金 (编号 6 942 5 0 0 2 )~~

摘　　要：采用 Ga As作为衬底研究了 Hg Cd Te MBE薄膜的表面缺陷 .借助 SEM分析了不同缺陷的成核机制 ,确定了获得良好表面形貌所需的最佳生长条件 .发现 Hg Cd Te外延生长条件、衬底表面处理等因素与外延层表面各种缺陷有关 .获得的外延层表面缺陷 (尺寸大于 2 μm)平均密度为 30 0 cm- 2 ,筛选合格率为 6 5 % .The surface defects on MBE-grown HgCdTe films on GaAs substrates were studied. The mechanism of surface defect formation was analyzed by SEM observations. The optimal growth conditions for obtaining a good morphological surface were determined. It was found that a variety of surface defects an epilayers are related to the HgCdTe growth conditions and the substrate surface treatment. The average density of surface defects (larger than 2 mum) for HgCdTe epilayers was obtained to be 300 cm(-2), and the yield was 65%.

关 键 词：分子束外延 HGCDTE 表面缺陷 薄膜 汞 镉 碲 

分 类 号：O484.1[理学—固体物理]