一个改进的用于铁电存储器设计的铁电电容宏模型  

An Improved Macro Model of Ferroelectric Capacitor for FeRAM Design

作　　者：任天令[1] 张武全[1] 李春晓[1] 陈宏毅[1] 朱钧[1] 刘理天[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《电子学报》2001年第8期1135-1137,共3页Acta Electronica Sinica

摘　　要：从描述铁电电容的P V滞回特性出发 ,本文在ZSTT宏模型的基础上提出了一个改进的铁电电容宏模型 ,并成功利用此模型对铁电存储器 (FeRAM)进行了电路优化和电路模拟 .最后将试图对此模型做进一步的推广 。An improved macro model is proposed based on ZSTT model,which is derived from th e hysteresis loop of a ferroelectric capacitor.This model is proved to be very s uccessful in the optimization and simulation for FeRAM design.It can also be ada pted to express the P-V characteristic of a ferroelectric capacitor imposed by nonsymmetrical voltage,which is useful in some new operation scheme.

关 键 词：铁电存储器 铁电电容 宏模型 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]