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作 者:曹亚安[1] 沈东方[2] 张昕彤[3] 孟庆巨[4] 马颖[1] 吴志芸[3] 白玉白[3] 李铁津 姚建年[1]
机构地区:[1]中国科学院化学研究所分子科学中心,北京100101 [2]中国人民解放军空军第二航空学院,长春130022 [3]吉林大学化学系,长春130023 [4]吉林大学电子科学系,长春130023
出 处:《高等学校化学学报》2001年第11期1910-1912,共3页Chemical Journal of Chinese Universities
基 金:国家自然科学基金 (批准号 :5 96 2 0 16 7);中国科学院重大基础研究项目资助
摘 要:We prepared TiO 2(anatase) and Sn doped TiO 2 nanoparticlate film by Plasma enhanced Chemical Vapor Deposition(PECVD) method. XRD and XPS experiments showed that Sn was doped into the lattice of TiO 2 with a ratio of n (Sn)∶ n (Ti)=1∶10 . Sn doping largely enhanced the photocatalytic activity of TiO 2 film for phenol degradation. The enhancement in photoactivity by doping was discussed, based on the characterization with AFM, FTIR and EFISPS. Sn doping produced localized level of Sn 4+ in the band gap of TiO 2, about 0.4 eV below the conduction band, which could capture photogenerated electrons and reduce O 2 adsorbed on the surface of TiO 2 film, thus accelerated the photocatalytic reaction.We prepared TiO 2(anatase) and Sn doped TiO 2 nanoparticlate film by Plasma enhanced Chemical Vapor Deposition(PECVD) method. XRD and XPS experiments showed that Sn was doped into the lattice of TiO 2 with a ratio of n (Sn)∶ n (Ti)=1∶10 . Sn doping largely enhanced the photocatalytic activity of TiO 2 film for phenol degradation. The enhancement in photoactivity by doping was discussed, based on the characterization with AFM, FTIR and EFISPS. Sn doping produced localized level of Sn 4+ in the band gap of TiO 2, about 0.4 eV below the conduction band, which could capture photogenerated electrons and reduce O 2 adsorbed on the surface of TiO 2 film, thus accelerated the photocatalytic reaction.
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