ZnS∶TbF_3薄膜电致发光器件性能的研究  

Research on Performance of ZnS∶TbF_3 Thin Film Electroluminesce Device

作　　者：何大伟[1] 杨胜[1] 王永生[1] 徐叙瑢[1] 

机构地区：[1]北方交通大学光电子技术研究所,信息存储,显示与材料开放实验室,北京100044

出　　处：《中国稀土学报》2001年第6期570-574,共5页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金 (5 9982 0 0 1);北京市自然科学基金 (4 0 12 0 10 )资助项目

摘　　要：用射频磁控溅射和扫描电子束蒸发方法研究制备了ZnS∶TbF3薄膜的交流电致发光器件。研究了制备ZnS∶TbF3薄膜电致发光器件的几种因素对电致发光器件性能的影响 ,诸如 ,磁控溅射过程中衬底温度 ,发光层厚度 ,退火等。The electroluminescence of ZnS doped with terbium (Tb) thin films prepared by radio frequency magnetron sputtering method was reported. The characteristics of the ZnS∶TbF 3 thin film electroluminescence devices, such as film characteristics of the ZnS∶Tb active layer, substrate temperatures during magnetron sputtering and Tb concentration of the active layer, etc. were investigated systematically. Annealing can evidently improve the luminescence performance of the luminescence device.

关 键 词：稀土 电致发光 磁控溅射 电子束蒸发 硫化锌 氟化镱 ZnS:TbF3薄膜 电致发光器件 

分 类 号：TN383.1[电子电信—物理电子学] O484.41[理学—固体物理]