一种新结构ZnS∶Tm^(3+)薄膜电致发光器件的研究  

Research on a New Structure ZnS∶Tm^(3+) TFEL Devices

作　　者：杨胜[1] 何大伟[1] 成正维[1] 邓朝勇[1] 关亚菲[1] 

机构地区：[1]北方交通大学光电子技术研究所,信息存储,显示与材料开放实验室,北京100044

出　　处：《中国稀土学报》2001年第6期583-585,共3页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金资助项目 (5 9982 0 0 1) ;北京市自然科学基金资助项目 (4 0 12 0 10 )

摘　　要：采用电子束蒸发法制备了一种新结构 (ITO/SiO2 /ZnS∶TmF3/SiO2 /ZnS∶TmF3/SiO2 /Al)的薄膜电致发光器件 ,并与传统双绝缘层结构的器件相比较。结果表明 ,新结构器件的发光蓝红外比和发光亮度要明显高于双绝缘层结构的器件。分析认为这是由于SiO2In order to increase the blue emitting of ZnS∶Tm 3+ TFEL devices, a new ZnS∶TmF 3 TFEL device with the structure of ITO/SiO 2/ZnS∶TmF 3/SiO 2/ZnS∶TmF 3/SiO 2/Al was prepared by e beam evaporation method. The EL emission spectra show that the brightness of the new structure device greatly increase compared with that of the conventional double insulator structure device, and the ratio between blue emission and infrared emission of the new structure device also enhance. This is ascribed to the electron accelerating action of the SiO 2 interlayer and the ZnS/SiO 2interface offered by the interlayer.

关 键 词：稀土 薄膜电致发光器件 硫化锌 铥 掺杂 薄膜电致发光 电子束蒸发法 显示材料 

分 类 号：TN383.1[电子电信—物理电子学] TN104.3