电子从不同晶向Si隧穿快速热氮化SiO_2膜的电流增强及模型解释  

The Current Enhancement of the Tunneling Rapid Thermal Nitrided SiO_2 Films from Different Oriented Si and the Model Explaination

作　　者：冯文修[1] 陈蒲生[1] 田浦延[1] 刘剑[1] 

机构地区：[1]华南理工大学应用物理系,广州510640

出　　处：《Journal of Semiconductors》2001年第11期1411-1415,共5页半导体学报（英文版）

摘　　要：用卤素钨灯作辐射热源快速热氮化 (RTN) 10 nm Si O2 膜 ,制备了〈10 0〉和〈111〉晶向 Si衬底上的 Si- Si Ox Ny-Al电容结构 .研究了电子从〈10 0〉和〈111〉不同晶向 N型硅积累层到 RTN后 Si O2 膜 (或原始 Si O2 膜 )的漏电流和高场 F- N隧穿电流 .研究结果表明 :经 RTN Si O2 膜比原始 Si O2 膜从低场到隧穿电场范围都明显地看到电导增强现象 .比较 RTN后两种不同晶向样品 ,低场漏电流没有多大的差别而在高场从〈10 0〉晶向比从〈111〉晶向 Si隧穿Si Ox Ny 膜的 F- N电流却明显增加 。The Si SiO x N y Al capacitors are fabricated on both <100>and <111> oriented Si by Rapid Thermal Nitridation (RTN)10nm SiO 2 films with a tungsten halogen lamp as radiation source heating.The electron F N tunneling currents in a higher field and the leakage current in a lower field are studied,which are both from the <100> and <111> oriented N type Si accumulation layer into the RTN SiO 2 (or original SiO 2).The results show that in the lower field,the current is enhanced after the original SiO 2 rapid thermal nitrification.No difference in the leakage current can be observed in the lower field for both the orientations;while in the higher field,the F N tunneling current is markedly increased from the <100> oriented compared with that from the <111> oriented capacitors,which can be explained by using to theory model on the basis of the conservation of transverse crystal momentum.

关 键 词：电子隧穿 快速热氮化 晶向硅 薄膜 二氧化碳 模型解释 

分 类 号：TN301[电子电信—物理电子学]