不锈钢载波钝化膜的半导体性质  

Semiconducting Properties of Passive Film Formed on Stainless Steel by Using A. V. Passivation

作　　者：张俊喜[1] 周国定[1] 乔亦男[2] 曹楚南[2] 张鉴清[3] 

机构地区：[1]上海电力学院电化学研究室 [2]浙江大学化学系,杭州310027 [3]中国科学院金属研究所

出　　处：《化学学报》2002年第1期30-36,共7页Acta Chimica Sinica

基　　金：国家重点研究发展规划基金(No.G19990650)资助项目.

摘　　要：运用交流阻抗法和光电化学法研究了不锈钢载波钝化膜层的半导体性质.讨论了交流阻抗测试中扰动频率的变化对Mott-Schottky曲线的影响,讨论了不锈钢载波钝化膜的n/p型、杂质施主密度和平带电位等半导体性质,同时结合光电化学法对交流阻抗测试结果进行了验证分析,实验结果认为不锈钢载波钝化膜层具有与直流钝化膜层相似的半导体性质,并通过膜层的组成结构对其半导体性质作了分析.Passive film formed on 304 stainless steel in 2.5 mol/L H2SO4 solution by using alternating voltage (A. V.) passivation have been investigated by measuring capacitance and photoelectrochemical parameters. The investigation of the effect of measure frequency on the slope of Mott-Schottky curve has been carried out. The photoelectrochemical measurements were consistent with the capacitance measurement. Analysis of the experimental results showed that the passive film formed 304 stainless steel by using A. V. passivation exhibits semiconducting properties. Using the simple model of semiconductor rather than the multi-donor level model can explain satisfactorily the semiconducting behavior of the film formed on 304 stainless steel by using A.V. passivation.

关 键 词：载波钝化 钝化膜 半导体性质 不锈钢 交流阻抗法 光电化学法 组成 结构 

分 类 号：TN304[电子电信—物理电子学]