溶胶-凝胶法制备掺氟二氧化硅低介电常数薄膜  

Preparation of SiOF Low Dielectric Constant Thin Film by Sol-gel Process

作　　者：陈佾[1] 沈杰[1] 徐伟[1] 严学俭[1] 章壮健[1] 华中一[1] 周峥嵘[2] 陶凤岗[2] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]复旦大学化学系,上海200433

出　　处：《真空科学与技术》2002年第1期10-14,共5页Vacuum Science and Technology

摘　　要：采用溶胶 凝胶法制备了低介电常数SiO2 薄膜和SiOF薄膜 ,F的掺入明显地降低了SiO2 薄膜的介电常数。研究了F的掺杂量对薄膜介电常数的影响 ,测量了 10～ 3 0 0kHz范围内电容随频率变化的曲线 ,并计算了相应介电常数。二次离子质谱对薄膜深度分析的结果表明 ,F在薄膜中的分布是不均匀的。讨论了溶胶 凝胶法制备掺F的SiO2 薄膜过程中各种因素对介电常数的影响 。SiO2 and SiOF thin films were prepared by sol-gel process. Fluorine doping plays an obvious role in lowering the dielectric constant of SiO2 films. The effect of quantity of fluorine doped on dielectric constant of the films has been studied. The relationship of capacitance with frequency in the range of 10-300 kHz were measured and the corresponding dielectric constants were calculated. Depth profile of the SiOF thin film from secondary ion mass spectroscopy showed the uneven distribution of F in the film. The effects of various parameters during sol-gel processing on these films were studied. The surface topography was also inspected with an atomic force microscope.

关 键 词：介电常数 溶胶-凝胶法 掺氟SiO2薄膜 二氧化硅薄膜 表面形貌 制备 

分 类 号：O484[理学—固体物理] TN304.21[理学—物理]