一种设计无机介质材料介电性能的新方法  

A New Method of Designing Inorganic Dielectric Material

作　　者：李玲霞[1] 吴霞宛[1] 张志萍[1] 王洪儒[1] 

机构地区：[1]天津大学电子信息学院,天津300072

出　　处：《硅酸盐通报》2001年第6期18-20,17,共4页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金 (批准号 :5 9782 0 0 3)资助项目

摘　　要：选用低介电常数的无机介质材料ZnO -B2 O3-SiO2 三元系统 ,进行了XRD和介电性能定量关系的研究 ,系统的主、次晶相为SiO2 、Zn2 SiO4 相。调整各组分 ,获得了超低介电常数的介质陶瓷 ,其介电性能为 :ε≈ 5 ,tgδ≤ 5× 10 -4 ,αc≤ 0± 30ppm/℃ ,IR≥ 10 12 Ω ,烧结温度为 1140℃。通过对系统所进行的X 射线衍射分析 ,探讨了用X 射线衍射峰强度计算各物相含量的方法 ,并代入李赫德涅凯对数混合定则 ,计算出系统的介电性能 。Inorganic dielectric material ZnO-B 2O 3-SiO 2 system was used to analyze quantitative relation with dielectric properties and XRD pattern.It was proposed that the main and minor phases of the system were SiO 2 phase and Zn 2SiO 4 phase.By adjusting the composition,a dielectric ceramic with extra low ε value was obtained.Its dielectric properties are:ε≈5,tgδ≤5×10 -4 ,α C≤(0±30)ppm/℃,I R≥10 12 Ω,and its sintering temperature is 1140℃.Through XRD analysis,the method for calculating each phase in the system was discussed with X ray diffraction peak intensity.These data were then introduced into Lichnetecker Law,from which the dielectric properties were obtained.This is a new method of designing dielectric properties of inorganic material.

关 键 词：ZnO-B2O3-SiO2系统 超低介电常数 X-射线衍射分析 衍射峰强度 介电性能 功能陶瓷 无机介质材料 

分 类 号：TQ174.758[化学工程—陶瓷工业] TQ174.13[化学工程—硅酸盐工业]