制备工艺对InP/SiO_2纳米膜性能的影响  

INFLUENCES OF FABRICATION TECHNIQUES ON THE COMPOSITION AND PHOTOLUMINESCENCE OF InP/SiO_2 NANOCOMPOSITE FILMS

作　　者：丁瑞钦[1] 王浩[1] 佘卫龙[2] 王宁娟[1] 于英敏[1] 

机构地区：[1]五邑大学 [2]中山大学超快速激光光谱国家重点实验室

出　　处：《材料研究学报》2001年第4期409-414,共6页Chinese Journal of Materials Research

基　　金：国家自然科学基金资助项目69806008;广东省自然科学基金资助项目970716.中山大学超快速激光光谱国家重点实验室开放课题

摘　　要：应用射频磁控共溅射方法，分别在ＩｎＰ薄片与磁控靶底座紧接触（方法 １）和 ＩｎＰ薄片放在 石英靶表面（方法 ２）两种情况下制备了 ＩｎＰ／ＳｉＯ_２复合薄膜，并分别在高纯 Ｈ_２中和在Ｐ气氛中对薄 膜进行了热处理．Ｘ射线光电子能谱表明，对于用方法 １制备的复合膜，其ＳｉＯ_２中的氧缺位、Ｐ和 Ｉｎ的氧化物的含量都比用方法２的少得多．Ｘ射线和卢瑟福背散射实验结果表明，在Ｐ气氛下的高温 （５２０℃）热处理，可以彻底地消除这些氧缺位和氧化物而得到符合化学计量的ＩｎＰ／ＳｉＯ_２纳米颗粒复合 薄膜．复合薄膜的光致发光特性与制备工艺密切相关．较详细地阐述了俘获态对光致发光影响的机理．The composite films of InP/SiO2 were deposited by cosputtering technique in a RF magnetron with InP slices put on the surface of magnetron target base and pressed tightly (method 1) and put on the surface of SiO2, and then annealed in highly pure H2 and phosphorus ambients respectively. Experimental results of X-ray photo-electron spectroscopy show that the contents of indium oxide, phosphorus oxide and oxygen deficiencies in SiO2 of the composite films deposited by method 1 are much less than those deposited by method 2. Results of X-ray diffraction and Rutherford backscattering experiments for the films annealed in phosphorus ambient at high temperature (520°C) show the obtaining of pure InP/SiO2 nanogranular films. The photoluminescence of the films is closely related to the fabrication techniques. The mechanism of the influence of trapping states on the photoluminescence was also elaborated.

关 键 词：InP/SiO2纳米复合膜 化学组分 微观结构 光致发光 制备工艺 磷化铟 二氧化碳 射频磁控溅射 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304[电子电信—物理电子学]