采用ZnCdTe衬底的MBE Hg_(1-x)Cd_xTe位错密度研究  

DISLOCATION DENSITY OF MBE GROWN Hg_(1-x)Cd_xTe ON ZnCdTe SUBSTRATES

作　　者：巫艳[1] 于梅芳[1] 陈路[1] 乔怡敏[1] 杨建荣[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所半导体材料器件研究中心,红外物理国家实验室,上海200083

出　　处：《红外与毫米波学报》2002年第1期23-27,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金 (批准号 6 942 5 0 0 2 );国家 86 3(批准号 86 3 30 7 16 10 )资助项目~~

摘　　要：报道了用MBE的方法 ,在ZnCdTe衬底上制备Hg1-xCdxTe薄膜的位错密度的研究结果 .研究发现Hg1-xCdxTe材料的位错密度与ZnCdTe衬底的表面晶体损伤、Hg1-xCdxTe生长条件以及材料组分密切相关 .通过衬底制备以及生长条件的优化 ,在ZnCdTe衬底上生长的长波Hg1-xCdxTe材料EPD平均值达到 4.2× 10 5cm-2 ,标准差为 3.5× 10 5cm-2 ,接近ZnCdTe衬底的位错极限 .可重复性良好 ,材料位错合格率为 73.7% 。The dislocation density of MBE grown Hg1 - x Cd-x Te on ZnCdTe substrates was studied. It was found that the dislocation density in Hg1 - x Cd-x Te was sensitive to the damage layers of ZnCdTe substrates, growth conditions of HgCdTc as well as compositions. By optimizing the substrate preparation procedures and growth conditions, the averaged EPD value of 4.2 x 10(5)cm(-2) with the standard deviation of 3.5 x 10(5)cm(-2) was obtained, close to the dislocation density limit of substrate. The reproducibility was good with a yield of 73. 7 % as screened by dislocation density. The results should be able to meet the requirements for FPAs of high performance.

关 键 词：分子束外延 Hg1-xCdxTe薄膜 位错密度 MBE 汞镉碲薄膜 ZnCdTe 锌镉碲化合物 红外焦平面探测器 生长条件 

分 类 号：O484.1[理学—固体物理] O484.5[理学—物理]