介观LC电路中的量子隧道效应  

Quantum tunneling effect in the mesoscopic LC circuit

作　　者：嵇英华[1] 饶建平[1] 雷敏生[1] 

机构地区：[1]江西师范大学物理系,南昌330027

出　　处：《物理学报》2002年第2期395-398,共4页Acta Physica Sinica

基　　金：江西省自然科学基金 (批准号 :0 0 10 04)资助的课题~~

摘　　要：考虑到电子在纳米电容器中的运动是一个单电子隧穿过程 ,因而将电容器作为一个隧道结 ,应用隧道模型的稳态法 ,研究了介观LC电路中的电流 电压特性 .结果表明 :由于库仑力的作用 ,介观LC电路中存在着阈值电压 .当外加电压小于阈值电压时 ,隧穿电流为零 ,显示出库仑阻塞现象 ;当外加电压远大于阈值电压时 ,隧穿电流与电压成正比 .Considering that the movement of an electron in the nano-capacitor is a single electron process through a tunnel, we regarded the nano-capacitor as a metal tunneling junction in this paper. And using the stationary state method, we studied the current-voltage characteristic in the mesoscopic LC circuit. Our results indicate that there is a threshold voltage V T in the circuit due to the effect of Coulombian force. When the external voltage is less than V T, the tunneling current is zero, which displays the Coulomb blockade. But when the external voltage is larger than V T, the tunneling current is proportional to the voltage.

关 键 词：介观LC电路 库仑阻塞 单电子隧道过程 量子隧道效应 电容器 量子涨落 

分 类 号：TN401[电子电信—微电子学与固体电子学]