Ⅲ-Ⅴ族磁半导体材料的研究与进展  

Research and development of Ⅲ-Ⅴ based magnetic semiconductors

作　　者：闫发旺[1] 梁春广[1] 

机构地区：[1]电子十三所,河北石家庄050051

出　　处：《半导体情报》2001年第6期2-7,共6页Semiconductor Information

摘　　要：Mn、Fe等过渡金属元素的 - 族稀磁半导体 ( DMS)材料和铁磁 /半导体异质结材料由于具备半导体和磁性材料的综合特性 ,可望广泛应用于未来的磁 (自旋 )电子器件 ,从而使传统的电子工业面临一场新的技术革命。Ⅲ-Ⅴdiluted magnetic semiconductors(DMS)with transition ions such as magnetic Mn 2+ or Fe 2+ and epitaxial ferromagnet/semiconductor heterostructures are expected to realize novel magneto electronic(or spin electronic) devices due to their combined properties of both magnetic materials and semiconductors,accordingly which will bring a technological revolution in conventional electronic industry.Above research area is reviewed in this paper.

关 键 词：稀磁半导体 半导体异质结 自旋电子器件 Ⅲ-V族磁半导体 半导体材料 

分 类 号：TN304.23[电子电信—物理电子学]