a—SiC/c—Si异质结太阳能电池中a—SiC:H薄膜的设计分析  

Analysis of the design for a-SiC:H thin films in a-SiC/c-Si heterojunction solar cells

作　　者：林鸿生[1] 段开敏[1] 马雷[1] 

机构地区：[1]中国科学技术大学物理系,安徽合肥230026

出　　处：《半导体技术》2001年第12期70-74,共5页Semiconductor Technology

基　　金：国家自然科学基金(69876024)

摘　　要：通过应用 Ｓｃｈａｒｆｅｔｔｅｒ－Ｇｕｍｍｅｌ解法数值求解 Ｐｏｉｓｓｏｎ方程，对热平衡 ｐ＋（ａ－ＳｉＣ：Ｈ）／ｎ（ｃ－Ｓｉ）异质结太阳能电池进行计算机数值模拟分析。给出了ｐ＋（ａ－ＳｉＣ：Ｈ）膜厚及其ｐ型掺杂浓度设计，还讨论了ｐ＋（ａ－ｓｉＣ：Ｈ）／ｎ（ｃ－Ｓｉ）异质结太阳能电池稳定性。A computer simulation model of p+(a-SiC:H)/n(c-Si) heterojuncion solar cells at thermodynamic equilibrium using a Scharfetter-Gummel solution of Poisson's equation has been developed. From results, the design of optimum thickness and p-type dopping concentration in the manufacture of p+(a-SiC:H)/n(c-Si) heterojuncion solar cells is analyzed. A design for the thick-ness and p-type dopping concentration of p+(a-SiC:H) thin films is preseated. Also, the stability of p+(a-SiC:H)/n(c-Si) heterojunction solar cells is discussed。

关 键 词：碳化硅 硅 薄膜 异质结太阳能电池 a-SiC:H 隙态密度分布 载流子收集 

分 类 号：TM914.41[电气工程—电力电子与电力传动] O484[理学—固体物理]