电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔  

Narrow-Line Light Emission from Porous Silicon Microcavities Prepared by Pulsed Electrochemical Etching Method

作　　者：徐少辉[1] 熊祖洪[1] 顾岚岚[1] 柳毅[1] 丁训民[1] 侯晓远[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《Journal of Semiconductors》2002年第3期272-275,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (No.5 983 2 10 0 )~~

摘　　要：用电化学脉冲腐蚀方法制备了多孔硅微腔 ,讨论了脉冲电化学腐蚀的参数——周期、占空比对多孔硅多层膜制备的影响 ,并用了以 HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行解释 ,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中 ,不但要考虑到 HF酸对硅的纵向电流腐蚀 ,也要考虑到 HF酸对多孔硅硅柱的横向浸泡腐蚀 .可通过选取合适的周期、占空比 ,使二者对多孔硅的作用达到适中 ,以制备出高质量的多孔硅多层膜和微腔 .并用正交实验法优化了制备多孔硅微腔的参数 ,根据优化的实验参数 ,制备出了发光峰半峰宽为 6Porous silicon microcavities have been prepared by the pulsed electrochemical etching method(PEEM).The orthogonal experimental method has been adopted to optimize the experimental conditions for fabrication of porous silicon microcavities.The optimal conditions obtained from experiments are:the period of 5ms;the duty cycle of 5/10 and the Bragg reflector consisting of 6 pairs of quarter wave length layers.Under this condition,the full width at half maximum of the light emission peak is reduced to be 6nm.A dynamic etching model based on the diffusion of HF acid is used to explain the experimental results.It indicates that the narrow emission peak of porous silicon microcavities prepared by PEEM can be attributed not only to the longitudinal etching,but also to the transverse etching (soaking etching) of HF.

关 键 词：多孔硅 微腔 光致发光 窄峰发射 电化学脉冲腐蚀法 

分 类 号：TN304.12[电子电信—物理电子学]