多孔硅荧光谱双峰结构的研究  

The Study of Photoluminescence Spectra of Porous Silicon Characterized with Double Peaks

作　　者：陈松岩[1] 何国荣[1] 陈小红[1] 韩建军 林爱清[1] 陈丽蓉[1] 

机构地区：[1]厦门大学物理与机电工程学院,福建厦门361005 [2]黑河市西沟水电有限责任公司,黑龙江黑河164300

出　　处：《厦门大学学报（自然科学版）》2002年第2期182-185,共4页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金 (6 0 0 0 6 0 0 4);福建省青年重点基金资助项目

摘　　要：采用阳极腐蚀法制备了多孔硅 (PS) ,用原子力显微镜 (AFM)照片对其表面和结构做了分析 ,观察到多孔硅纳米尺寸的微结构 ;并进行了多孔硅层 (PSL )的光致发光谱 (PL)测量 ,观察到PL谱峰的”蓝移”和双峰现象 ,符合量子尺寸效应和发光中心理论 。In this article, a porous silicon was fabricated by electrochemical anodizing using our self-designed apparatus, and its surface morphology was observed with an atomic force microscope. From the photoluminescence spectra of porous silicon layers, the phenomenon of blue shift and double peaks can be seen. It was concluded that the quantum confinement theory and luminescence centers were responsible for these phenomena.. The Infrared Spectrum proves the existence of luminescence centers.

关 键 词：多孔硅 红外吸收谱 量子效应 蓝移 微结构 荧光光谱 双峰结构 

分 类 号：TN304.12[电子电信—物理电子学] O472.3[理学—半导体物理]