名义上无序的GaInP合金的发光瞬态过程研究  

Luminescence Decay on the Nominally Disordered GaInP Alloy

作　　者：吕毅军[1] 高玉琳[1] 郑健生[1] 蔡志岗[2] 桑海宇[2] 曾学然[2] 

机构地区：[1]厦门大学物理学系,福建厦门361005 [2]中山大学超快速激光光谱学国家重点实验室,广东广州510275

出　　处：《厦门大学学报（自然科学版）》2002年第2期186-189,共4页Journal of Xiamen University：Natural Science

基　　金：福建省自然科学基金 (A9910 0 0 4;A0 110 0 0 7)资助项目

摘　　要：报道了名义上无序GaxIn1 xP(x =0 .5 2 )合金的发光瞬态过程 ,对样品在 77K和 30 0K下不同激发强度的时间衰退过程和时间分辨光谱的分析表明 ,这块名义上无序的合金也存在很微弱的有序度 .在 77K的高激发强度下 ,衰退过程符合单指数衰退规律 ,在低激发强度下 ,符合双指数衰退规律 ;而在 30 0K下 ,衰退过程都符合双指数衰退规律 .在Luminescence decay and Time-Resolved Photoluminescence(TRPL) spectroscopy were applied to study the transient luminescence process of the nominally disordered GaInP alloy in this paper. The luminescence decay of GaInP alloy is temperature and excitation-intensity dependent. At 77 K and under high excitation intensity, the luminescence decay shows single exponential decay, while under low excitation intensity of 77 K or at 300 K, the luminescence decay shows double exponential decay. The analysis indicates that this nominally disordered GaInP alloy actually exists very weak degree of order. The blue-shift of PL peak was observed in the TRPL spectra at 77 K, which derives from the transfer of the carriers from the ordered domain to the disordered region. At 300 K, due to the thermal quenching, the transfer is too weak to be observed. However, the recombination of the carriers between the ordered domain and the disordered region still devotes to the luminescence.

关 键 词：有序度 无序 Ⅲ-V族半导体 GaInP合金 发光瞬态过程 激发强度 衰退过程 

分 类 号：TN304.26[电子电信—物理电子学] O472.3[理学—半导体物理]