强脉冲X射线辐照Si-SiO_2界面对C-V和I-V特性曲线的影响  

Radiation impairment effects on C-V curves and I-V curves of Si-SiO_2 interface induced by intense pulse X-ray

作　　者：杨志安[1] 靳涛[2] 杨祖慎[3] 姚育娟 罗尹虹 戴慧莹[5] 

机构地区：[1]济南大学理学院,山东济南250022 [2]中国科学院新疆物理研究所,新疆乌鲁木齐830011 [3]新疆大学物理系,新疆乌鲁木齐830046 [4]西北核技术所,陕西西安710024 [5]空军工程大学电信通信学院,陕西西安710077

出　　处：《强激光与粒子束》2002年第2期302-306,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金资助课题 ( 1986 6 0 0 1)

摘　　要：利用强脉冲 X射线对 Si-Si O2 界面进行了辐照 ,测量了 C-V曲线和 I-V曲线。实验发现 ,经过强脉冲 X射线对 Si-Si O2 界面进行的辐照 ,使 C-V曲线产生了正向漂移 ,这一点与低剂量率辐射结果不同 ;辐射后 ,感生 I-V曲线产生畸变 ;特别地 ,从 I-V曲线上还反映出强脉冲 X射线辐照的总剂量效应造成电特性参数明显退化 ,最后甚至失效。讨论了强脉冲 X射线辐照对 Si-Si O2 界面产生损伤的机理 。Intense pulse X ray is used to irradiate Si SiO 2 interface. C V curves and I V curves are tested before and after X ray irradiation. Experiment results show that C V curves have the following changes under intense pulse X ray irradiation: (1) Flatband Voltage of high frequency C V has a little positive drift, sodoes the gate voltage in depletion region, which is different from a negative drift under low power pulse X ray irradiation; (2) Oxide capacitance of low and high frequency C V lift after intense pulse X ray irradiation; (3) Minimum capacitance of high frequency C V lifts after intense pulse X ray irradiation. Experiment results also show that slopes of I V subthreshold curves have gradually aberrant under six times intense pulse X ray irradiation. One reason is that intense pulse X ray irradiation increases density of interface trap D it , thus changes the I V curve slopes. I V curves show that accumulated dose of intense pulse X ray causes deteriorative electric characters of Si SiO 2.

关 键 词：强脉冲X射线 Si-SiO2界面 辐射损伤 C-V曲线 I-V曲线 损伤机理 MOS器件 

分 类 号：TN386.1[电子电信—物理电子学] O434.11[机械工程—光学工程]