激光二极管抽运的Nd∶YVO_4 GaAs被动调Q激光器研究  

Study of a Diode-Pumped Nd∶YVO_4 Laser Passively Q Switched with GaAs

作　　者：李平[1] 王青圃[1] 张行愚[1] 赵圣之[1] 王玉荣[1] 王继扬[2] 黄伯标[2] 张少军[2] 刘训民[2] 何京良[3] 吕兴强 

机构地区：[1]山东大学光学系,济南250100 [2]山东大学晶体材料研究所,济南250100 [3]山东师范大学物理系,济南250100

出　　处：《光学学报》2002年第3期298-302,共5页Acta Optica Sinica

基　　金：中国博士后基金;山东大学青年基金资助课题

摘　　要：报道了激光二极管端面抽运Nd∶YVO4 半导体材料GaAs被动调Q激光器运转。测量了不同透过率输出镜条件下 ,输出调Q脉冲的宽度、能量及脉冲重复率。在抽运功率为 4W时 ,得到了脉宽为 30ns、能量为 8μJ、重复率为6 0kHz的稳定的调Q脉冲。A passively Q switched laser diode end pumped Nd∶YVO 4 laser is demonstrated in which a GaAs film is used as the saturable absorber. The pulse width, pulse energy and pulse repetition rate of different output coupler are measured. At 4 W pumping power, stable laser pulse as short as 30 ns with 8 μJ energy and 60 kHz pulse repetition rate can be generated with this laser. Meanwhile, the Q switching dynamics is theoretically studied based on the rate equations. Some phenomena generated in the laser are analyzed.

关 键 词：激光二极管抽运 ND:YVO4激光器 GAAS 被动调Q 砷化镓 半导体材料 全固态激光器 

分 类 号：TN248.1[电子电信—物理电子学]